Brian G. Burke, Ph.D



Brian G. Burke, Ph.D.

Brian G. Burke, Ph.D., is an associate in Sterne Kessler’s Mechanical & Design Practice Group. Brian helps clients obtain patent protection, enforce patent rights, and navigate the existing patent landscape. He has a research background in applied physics, nanophysics, mechanical engineering, electrical engineering, optical engineering, and materials science. Brian has extensive experience in device fabrication (CMOS, MOSFETs, CNTFETs, MEMS, metallized apertures, bilayer cantilevers, thermal sensors), lithography (DUV, EBL, LIL, FIB, RIE), nanotechnology (AFM, STM, SEM, ALD, graphene, endofullerenes), and optics (Raman, FTIR, interferometry, lasers, superlenses, surface plasmons). Specifically, Brian has over five years of cleanroom processing experience (Class 100), and also has experience with composition ternary plots for superconducting, photochromic, and charge flow investigations.

Prior to joining Sterne Kessler, Brian worked as a consultant for a private IP vendor for four years and at the National Institute of Standards and Technology (NIST) in the Ceramics Division as a NRC Postdoctoral Fellow for three years. His dissertation research involved development of an ambient DUV photolithography system via surface plasmons and investigation of doped silicon and endohedral fullerenes by Raman spectroscopy.

Brian earned his J.D. from American University Washington College of Law. He received his Ph.D. and B.S. in physics from the University of Virginia.

Technical Publications

  • Brian G. Burke, “A Meditation on Intangibility: The Input Value Problem of Patent Valuation,” SSRN 2944742 (2017).
  • Burke et al., “Laser heating and detection of bilayer microcantilevers for non-contact thermodynamic measurements,” Appl. Phys. Lett. 102, 021916 (2013).
  • Burke et al., “Nanoscale specific heat capacity measurements using optoelectronic bilayer microcantilevers,” Appl. Phys. Lett. 101, 243112 (2012).
  • Burke et al., “Vibrational spectrum of the endohedral Y2C2@C92 fullerene by Raman spectroscopy: Evidence for tunneling of the diatomic C2 molecule,” Phys. Rev. B 83, 115457 (2011).
  • Burke et al., “Deep UV pattern definition in PMMA,” Nanotechnology 19, 215301 (2008).

Thought Leadership

Contact Information

Phone Number


American University Washington College of Law
University of Virginia
University of Virginia


District of Columbia
United States Patent & Trademark Office