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Min Yang, Ph.D.

Student Associate

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Min Yang

Min Yang, Ph.D., is a student associate in Sterne Kessler's Electronics Practice Group, where she assists in the preparation and prosecution of U.S. and foreign patent applications, aids in the formulation of invalidity, non-infringement, freedom-to-operate, clearance, and patentability opinions, and provides litigation matter support. Her technical areas of expertise include semiconductor materials and devices, microelectronics fabrication and packaging, digital and analog circuits, memories, photonics, nanotechnology, MEMS, sensors, energy storage and harvesting devices.

Prior to joining Sterne Kessler, Min held various technical positions with IBM, where she focused on developing cutting edge innovations and technologies in such areas as high performance CMOS, DRAM, Phase-Change Memory and Silicon Photonics. While her last two years at IBM were involved with bio-sensors and micro-batteries using novel packaging and MEMS techniques, her best known contributions were in the semiconductor area. She received an IBM research division award in 2015 for her technical leadership for FINFET technology for 14nm CMOS. Prior to that, she was one of the pioneers in the field of Silicon Photonics, where passive and active photonic devices were fully integrated with CMOS technology. In 2006, she was recognized as an IBM Master Inventor for the invention of Hybrid-Orientation-Technology for high performance CMOS. She also has varied experience in memory technologies, initially working as an integration engineer on IBM’s DRAM technology, and progressing to integration manager for embedded DRAM. In research, she also explored the field of Phase-Change Memory.

In addition to having over 18 years of industry R&D experience, Min has co-authored over 60 technical publications and conference presentations. She is co-inventor on more than 30 U.S. patents. From 2013 to 2017, she was a technical committee member of the IEEE Electron Device Society. From 2005 to 2007, she served as a sub-committee member and session chair for the IEEE International Electron Devices Meeting.

Min received her Ph.D. degree in electrical engineering from Princeton University. Her doctoral research focused on SiGe material epitaxy using rapid-thermal chemical vapor deposition and sub-100nm vertical MOSFET fabrication and characterization. Min received her M.S. and B.S. degrees in physics in China, where she studied Raman scattering and photoluminescence of SiGe/Si quantum wells.

Technical Publications

  • M. Yang, W. M. J. Green, S. Assefa, J. Van Campenhout, B. G. Lee , C. V. Jahnes, F. E. Doany, C. L. Schow, J. A. Kash, and Y. A. Vlasov, “Non-Blocking 4x4 Electro-Optic Silicon Switch for on-Chip Photonic Networks”, Optics Express 19, 47 (2011).
  • T. Nirschl, J. B. Philipp, T. D. Happ, G. W. Burr, B. Rajendran, M.-H. Lee, A. Schrott, M. Yang, M. Breitwisch, C.-F. Chen, E. Joseph, M. Lamorey, R. Cheek, S.-H. Chen, S. Zaidi, S. Raoux, Y.C. Chen, Y. Zhu, R. Bergmann, H.-L. Lung, C. Lam, “Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory”, International Electron Device Meeting, p461 (2007)
  • (Invited) M. Yang, V. Chan, K. Chan, L. Shi, D. Fried, J. Stathis, A. Chou, E. Gusev, J. Ott, M. Fischetti, and M. Ieong, “Hybrid Orientation Technology (HOT): Opportunities and Challenges”, IEEE Trans. Electron Devices 53, 965 (2006).
  • M. Yang, K. Rim, D. Rogers, J. Schaub, J. Welser, D. Kuchta, D. Boyd, F. Rodier, P. Rabidoux, J. Marsh, A. Ticknor, Q. Yang, A. Upham, and S. Ramac, " A High Speed, High-Sensitivity Silicon Lateral Trench Photodetector", IEEE Electron Device Lett. 23, 395 (2002)
  • M. Yang, C.-L. Chang, M. Carroll, and J.C. Sturm, "25nm p-channel vertical MOSFET’s with SiGeC sources/drains", IEEE Electron Device Lett. 20, 301 (1999).
  • M. Yang, J.C. Sturm, and J. Prevost, "Calculation of band alignments and quantum confinement effects in zero- and one-dimensional pseudomorphic structures". Phys. Rev. B 56, 1973 (1997).
  • M. Yang, D. Huang, P. Hao, F. Zhang, X. Hou, and X. Wang, "Study of Raman peak shift and line-width of light-emitting porous silicon," J. Appl. Phys. 75, 651 (1994).

Contact Information

Phone Number

Education

J.D.
Candidate (2023)
American University Washington College of Law
Ph.D.
Electrical Engineering
Princeton University
M.S.
Physics
Fudan University
B.S.
Physics
Nanjing University

Affiliations

Institute of Electrical and Electronic Engineers (IEEE)

Languages Spoken

Chinese (Mandarin)